EE-612

This effect is called polysilicon depletion. It leads to a reduced electron concentration at the interface and causes an effective increase of the dielectric ...

1) Polysilicon depletion lowers the gate cap and increases the effective electrical thickness of the gate insulator. 2) Quantum confinement increases V. T. 3) ...

Degradation of MOS gate capacitance in the inversion region becomes worse as the gate length is scaled down, according to a new experiment.

A heavily doped film of polycrystalline silicon (poly-Si) is typically employed as the gate-electrode material in modern MOS devices. – There are practical ...

由 YC Yeo 著作 · 2004 · 被引用 109 次 — In scaling the transistor gate length LG below 50 nm, problems related to poly-silicon (poly-Si) gate depletion and high gate resistance become very significant ...

Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is ...

2023年6月11日 — Why PolySi to HKMG. High-K Metal Gate; 隨元件/製程微縮，接近導體的PolySilicon (N+/P+ Poly-Si)問題越明顯。因為本質是半導體，在小尺寸下，閘極 ...

2019年6月15日 — （2um以前的时代都是Metal Gate，1.5um以下的时代都是Poly Gate了)。 ... 再回来讨论Poly gate吧，刚刚讲的如果直接在poly gate ... Poly Depletion Effect)。

串接了一個Poly Depletion電容，使得等. 效閘極電容變 ... Dual gate structure(metal-N, metal+poly-P) ... 2001/10/9 Chartered Gate Structure/Process Dummy SiN gate/high ...